• Part: HYG053N10NS1V
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HOOYI
  • Size: 471.47 KB
Download HYG053N10NS1V Datasheet PDF
HOOYI
HYG053N10NS1V
Feature - 100V/95A RDS(ON)=5.2mΩ(typ.)@VGS = 10V - 100% Avalanche Tested - Reliable and Rugged - Halogen-Free Devices Available (Ro HS pliant) Applications - Switching Application - Motor control and drive - Battery management N-Channel Enhancement Mode MOSFET Pin Description G DS TO-252-2L G DS TO-251-3L G DS TO-251-3S N-Channel MOSFET Ordering and Marking Information G053N10 XYMXXXXXX G053N10 XYMXXXXXX G053N10 XYMXXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish;which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed...