• Part: HYG028N10NS1B6
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HOOYI
  • Size: 1.50 MB
Download HYG028N10NS1B6 Datasheet PDF
HOOYI
HYG028N10NS1B6
Feature - 100V/230A RDS(ON)=2.4mΩ (typ.) @ VGS = 10V - 100% Avalanche Tested - Reliable and Rugged - Halogen-Free and Green Devices Available (Ro HS pliant) Applications - Power Switching application - Uninterruptible Power Supply - Motor Control Pin Description Pin7 Pin1 TO-263-6L Pin4 Pin1 Ordering and Marking Information B6 G028N10 XYMXXXXXX Package Code B6 :TO-263-6L Date Code XYMXXXXXX Pin2,3,5,6,7 N-Channel MOSFET Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish; which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements,...