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HY4008W/A
N-Channel Enhancement Mode MOSFET
Features
• 80V/200A
RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Switching application • Power Management for Inverter Systems.
Pin Description
S
D G
TO-247-3L
S
D G
TO-3P-3L
D
G N-Channel MOSFET
Ordering and Marking Information
S
WA HY4008 HY4008
YYÿ XXXJWW G YYÿ XXXJWW G
Package Code W : TO-247-3L
Date Code YYXXX WW
A : TO-3P-3L
Assembly Material G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.