• Part: HY3810B
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HOOYI
  • Size: 939.05 KB
Download HY3810B Datasheet PDF
HOOYI
HY3810B
Features - 100V/180A RDS(ON) = 5.0 m(typ.) @ VGS=10V - 100% avalanche tested - Reliable and Rugged - Lead Free and Green Devices Available (Ro HS pliant) N-Channel Enhancement Mode MOSFET Pin Description DS G TO-220FB-3L DS G TO-220FB-3S G DS TO-263-2L Applications - Switching application - Power Management for Inverter Systems. DS G TO-3PS-3L DS G TO-3PM-3S Ordering and Marking Information N-Channel MOSFET P HY3810 YYXXXJWW G PS HY3810 YYXXXJWW G M HY3810 YYXXXJWW G PM HY3810 YYXXXJWW G B HY3810 YYXXXJWW G Package Code P : TO-220FB-3L B: TO-263-2L PM: TO-3PM-3S M : TO-220FB-3S PS: TO-3PS-3L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding pounds/die attach materials and 100% matte tin plate Termination finish;which are fully pliant with Ro HS. HUAYI lead -free products meet or exceed the lead Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines...