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HY3708PM - N-Channel Enhancement Mode MOSFET

Download the HY3708PM datasheet PDF. This datasheet also covers the HY3708P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications

Power Management for Inverter Systems.

Features

  • 80V/170A RDS(ON) = 3.8 mΩ (typ. ) @ VGS=10V.
  • 100% avalanche tested.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY3708P-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY3708PM
Manufacturer HOOYI
File Size 4.90 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY3708PM Datasheet

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Other Datasheets by HOOYI

Part Number Description
HY3708P N-Channel Enhancement Mode MOSFET
HY3708PS N-Channel Enhancement Mode MOSFET
HY3708B N-Channel Enhancement Mode MOSFET
HY3708M N-Channel Enhancement Mode MOSFET
HY3704B N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
HY3708P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/170A RDS(ON) = 3.8 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications • Power Management for Inverter Systems.
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