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HY3606P - N-Channel MOSFET

Download the HY3606P datasheet PDF. This datasheet also covers the HY3606 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

DS G TO-220FB-3L DS G TO-263-2L Applications Switching application

Power Management for Inverter Systems.

Features

  • 60V/162A RDS(ON) = 3.5 mΩ (typ. ) @ VGS=10V.
  • 100% avalanche tested.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY3606-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY3606P
Manufacturer HOOYI
File Size 3.78 MB
Description N-Channel MOSFET
Datasheet download datasheet HY3606P Datasheet

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Other Datasheets by HOOYI

Part Number Description
HY3606 N-Channel MOSFET
HY3606B N-Channel MOSFET
HY3610P N-Channel Enhancement Mode MOSFET
HY3003 N-Channel MOSFET
HY3003B N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
HY3606P/B N-Channel Enhancement Mode MOSFET Features • 60V/162A RDS(ON) = 3.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-263-2L Applications • Switching application • Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Information S PB HY3606 HY3606 YYÿ XXXJWW G YYÿ XXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.
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