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HY19P03B - P-Channel Enhancement Mode MOSFET

Download the HY19P03B datasheet PDF. This datasheet also covers the HY19P03P variant, as both devices belong to the same p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

P-Channel Enhancement Mode MOSFET Pin Description z -30V/-90A RDS(ON)= 4.7mΩ(typ.)@VGS =-10V RDS(ON)= 6.5mΩ(typ.)@VGS =-4.5V z 100% avalanche tested z Reliable and Rugged z Lead Free and Green Devices Available (RoHS Compliant) GDS TO-220FB-3L GDS TO-263-2L Applications z Switching Application

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Note: The manufacturer provides a single datasheet file (HY19P03P-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY19P03B
Manufacturer HOOYI
File Size 745.91 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY19P03B Datasheet

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Other Datasheets by HOOYI

Part Number Description
HY19P03 P-Channel MOSFET
HY19P03D P-Channel MOSFET
HY19P03P P-Channel Enhancement Mode MOSFET
HY19P03U P-Channel MOSFET
HY19P03V P-Channel MOSFET

Full PDF Text Transcription

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HY19P03P/B Feature Description P-Channel Enhancement Mode MOSFET Pin Description z -30V/-90A RDS(ON)= 4.7mΩ(typ.)@VGS =-10V RDS(ON)= 6.5mΩ(typ.)@VGS =-4.5V z 100% avalanche tested z Reliable and Rugged z Lead Free and Green Devices Available (RoHS Compliant) GDS TO-220FB-3L GDS TO-263-2L Applications z Switching Application z Power Management for DC/DC Ordering and Marking Information P HY19P03 YYXXXJWW G B HY19P03 YYXXXJWW G P-Channel MOSFET Package Code P: TO-220FB-3L B: TO-263-2L Date Code YYXXX WW Assembly Material G:lead Free Device Note: H8$<, lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.
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