HY1506S - N-Channel MOSFET

This page provides the datasheet information for the HY1506S, a member of the HY1506D N-Channel MOSFET family.

HOOYI

Datasheet Details

Part number	HY1506S
Manufacturer	HOOYI
File Size	877.45 KB
Description	N-Channel MOSFET
Datasheet	HY1506S Datasheet
Additional preview pages of the HY1506S datasheet.

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Full PDF Text Transcription

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HY1506D/U/S Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient EAS Drain-Source Avalanche Energy TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C L=0.5mH Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=48V Rating 60 ±25 175 -55 to 175 55 220** 55 38 100 50 1.

Published: Aug 19, 2018 |