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HY1403 - N-Channel MOSFET

Description

S D G TO-252-2L S D G TO-251-3L S D G TO-251-3L Applications

Power Management for Inverter Systems.

Features

  • 30V/42A, RDS(ON)= 10 mΩ (typ. ) @ VGS=10V.
  • 100% EAS Guaranteed.
  • Super Low Gate Charge.
  • Excellent CdV/dt effect decline.
  • Advanced high cell density Trench technology.
  • Halogen - Free Device Available Pin.

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Datasheet preview – HY1403

Datasheet Details

Part number HY1403
Manufacturer HOOYI
File Size 5.60 MB
Description N-Channel MOSFET
Datasheet download datasheet HY1403 Datasheet
Additional preview pages of the HY1403 datasheet.

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Full PDF Text Transcription

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HY1403D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/42A, RDS(ON)= 10 mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Excellent CdV/dt effect decline • Advanced high cell density Trench technology • Halogen - Free Device Available Pin Description S D G TO-252-2L S D G TO-251-3L S D G TO-251-3L Applications • Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Information S DUS HY1403 HY1403 HY1403 YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G Package Code D : TO-252-2L S : TO-251-3L Date Code YYXXX WW U : TO-251-3L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.
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