• Part: HY030N06P
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HOOYI
  • Size: 937.98 KB
Download HY030N06P Datasheet PDF
HOOYI
HY030N06P
Feature - 65V/140A RDS(ON)= 2.4 mΩ(typ.)@VGS = 10V RDS(ON)= 3.7 mΩ(typ.)@VGS = 4.5V - 100% Avalanche Tested - Reliable and Rugged - Lead- Free Devices Available (Ro HS pliant) N-Channel Enhancement Mode MOSFET Pin Description GDS TO-220FB-3L G DS TO-3PS-3L GDS TO-220MF-3L Applications - Switching application - Power management for inverter systems Ordering and Marking Information N-Channel MOSFET HY030N06 YYXXXJWW G HY030N06 YYXXXJWW G HY030N06 YYXXXJWW G Package Code P :TO-220FB-3L PS:TO-3PS-3L Date Code YYXXX WW MF:TO-220MF-3L Assembly Material G:Lead Free Note: HUAYI lead -free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish;which are fully pliant with Ro HS. HUAYI lead -free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by...