Datasheet4U Logo Datasheet4U.com

H8205A - Dual N-Channel Enhancement-Mode MOSFET

Download the H8205A datasheet PDF. This datasheet also covers the H8205A-HI variant, as both devices belong to the same dual n-channel enhancement-mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process.

Features

  • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A.
  • High Density Cell Design for Ultra Low On-Resistance.
  • High Power and Current Handing Capability.
  • Fully Characterized Avalanche Voltage and Current.
  • Ideal for Li ion Battery Pack.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H8205A-HI-SINCERITY.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H8205A
Manufacturer HI-SINCERITY
File Size 94.67 KB
Description Dual N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet H8205A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
H8236-07 HPD (HYBRID PHOTO-DETECTOR) MODULES Hamamatsu Corporation
H8249 Side-on PMT Hamamatsu Corporation
H8249-001 Side-on PMT Hamamatsu Corporation

Other Datasheets by HI-SINCERITY

Part Number Description

Full PDF Text Transcription

Click to expand full text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200905 Issued Date : 2009.02.27 Revised Date : Page No. : 1/4 H8205A Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) Features • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.
Published: |