SFX7N50 Datasheet | HI-SEMICON

DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using advanced technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. Features - ID=7A , VDS=500V - RDS(ON) TYP: 0.68Ω@VGS=10V ID=3.5A MAX: 0.90Ω Applications - Power faction correction (PFC) - Switched mode power supplies (SMPS) - Uninterruptible power supply (UPS) - LED lighting power ORDERING INFORMATION Part No. SFF7N50 SFD7N50 Package TO-220F-3L TO-252-2L Marking SFF7N50 SFD7N50 Http://.hi-semicon. Material Pb free Pb free Packing Tube Reel Rev 1.0 Page 1 of 9 ABSOLUTE MAXIMUM RATINGS (TJ=25C unless otherwise noted) Characteristics Symbol Ratings SFF7N50 SFD7N50 Drain-Source Voltage Gate-Source Voltage ±30 TC = 25C Drain Current TC = 100C Drain Current Pulsed (Note...