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HU60N03 - 30V N-Channel MOSFET

Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 18.5 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 9mΩ (Typ. ) @V GS=10V  100% Avalanche Tested TO-252 TO-251 HD60N03 HU60N03 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Vo.

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Datasheet Details

Part number HU60N03
Manufacturer HAOLIN
File Size 1.40 MB
Description 30V N-Channel MOSFET
Datasheet download datasheet HU60N03 Datasheet

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HD60N03_HU60N03 Nov 2009 HD60N03 / HU60N03 30V N-Channel MOSFET BVDSS = 30 V RDS(on) = 9mΩ ID = 60 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 18.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 9mΩ (Typ.) @V GS=10V  100% Avalanche Tested TO-252 TO-251 HD60N03 HU60N03 1.Gate 2. Drain 3.
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