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HD1H15A - N-Channel Enhancement Mode MOSFET

Features

  • VDSS=100V／VGSS=±20V／ID=15A RDS(ON)=105mΩ(Max. )@VGS=10V RDS(ON)=175mΩ(Max. )@VGS=4.5V.
  • ESD protect.
  • Reliable and Rugged.
  • High Density Cell Design For Ultra Low On-Resistance Chip Diagram.

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Datasheet Details

Part number HD1H15A
Manufacturer HAOLIN
File Size 2.23 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HD1H15A Datasheet

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Full PDF Text Transcription

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100VDS／±20VGS／15A(ID) N-Channel Enhancement Mode MOSFET HD1H15A Features  VDSS=100V／VGSS=±20V／ID=15A RDS(ON)=105mΩ(Max.)@VGS=10V RDS(ON)=175mΩ(Max.)@VGS=4.5V  ESD protect  Reliable and Rugged  High Density Cell Design For Ultra Low On-Resistance Chip Diagram Applications  Synchronous Rectification  Power Management in Inverter System TO-252 TO-251 HD1H15A 1.Gate 2. Drain 3. Source Physical Characteristics Switching Time Test Circuit and Waveforms  Wafer Diameter 8 inches (± 0.1 inche)  Wafer Thickness: 8mils (±0.6 mil)  Die size: 1700μm x 1240μm (Including scribe line)  Scribe Line Width: 60um  Gross die: 12,549  Metalization: Frontside: Al/Si/Cu Backside: Ti/Ni/Ag  Metal thickness: Front-side: 4.0μm Back0side: 1.
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