SI2302
Features
- 20V, 3.5A, RDS(ON)=60mΩ @VGS=4.5V - High dense cell design for extremely low RDS(ON) - Rugged and reliable - Lead free product is acquired - SOT-23 Package - Marking Code: A2 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0
Internal Block Diagram D
HNM2302（SOT-23） D
HNM2302
N-Channel MOSFETs
HNM2302 N-Channel Enhancement Mode Field Effect Transistor
对应其他工业型号 2302 SI2302
AO2302 GM2302
元件标识（打印）
S SOT-23 内部结构
G SOT-23 管脚排列
- MAXIMUM RATINGS 最大額定值 Characteristic 特性参数
Symbol 符号
Drain-Source Voltage 漏极-源极电压 Gate- Source Voltage 栅极-源极电压 Drain Current (continuous) 漏极电流-连续 Drain Current (pulsed) 漏极电流-脉冲
BVDSS VGS ID IDM
Total Device Dissipation 总耗散功率 TA=25℃ (环境温度为25℃)
Junction 结温
Tj
Storage Temperature 储存温度
Tstg
DEVICE MARKING: A2
Max 最大值 20 ±10 3.5 11
Unit 单位 V A
1000 m W
150 ℃
-55 to +150 http://.szhhe. HAOHAI ELECTRONICS CO., LTD.
第1页 共4页 致力於中國功率器件優秀供應商 kkg@kkg..cn HNM2302_SOT-23
3.5A, 20V 贴片N沟道场效应管 产品参数规格书
HNM2302...
