• Part: HPM3415
  • Description: P-Channel Enhancement-Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HAOHAI
  • Size: 272.55 KB
Download HPM3415 Datasheet PDF
HAOHAI
HPM3415
Features  - -20V, -4.0A, RDS(ON)=35mΩ @ VGS=-4.5V  - High dense cell design for extremely low RDS(ON)  - Rugged and reliable  - Lead free product is acquired  - SOT-23 Package  - Marking Code: A15E   Case Material: Molded Plastic.   UL Flammability Classification Rating 94V-0 P-Channel MOSFETs HPM3415 P-Channel Enhancement Mode MOS FETs 对应其他工业型号 SI3415 AO3415 ME3415 GM3415 Internal Block Diagram D HPM3415 (Package: SOT-23) D 元件标识(打印) S SOT-23 内部结构图 G SOT-23 管脚排列 DEVICE MARKING: A15E  - MAXIMUM RATINGS 最大額定值 Characteristic 特性参数 Symbol 符号 Max 最大值 Unit 单位 Drain-Source Voltage 漏极-源极电压 Gate- Source Voltage 栅极-源极电压 Drain Current (continuous) 漏极电流-连续 Drain Current (pulsed) 漏极电流-脉冲 ESD (HBM) 静电释放 (人体模型) Total Device Dissipation 总耗散功率 TA=25℃ (环境温度为25℃) Junction 结温 Storage Temperature 储存温度 Solder Temperature/Solder Time 焊接温度/焊接时间 BVDSS VGS ID IDM PD Tj Tstg T/t -20 V ±8 -4 A -17 1000 m W 150 ℃ -55 to +150 260/10 ℃/S http://.szhhe. HAOHAI ELECTRONICS CO.,...