HPM2623
Features
- -20V, -6A, RDS(ON)=33mΩ @ VGS=-4.5V - High dense cell design for extremely low RDS(ON) - Rugged and reliable - Lead free product is acquired - SOT-23 Package - Marking Code: 2623 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0
Internal Block Diagram D
HPM2623（SOT-23） D
P-Channel MOSFETs
HPM2623 P-Channel Enhancement Mode MOS FETs 对应其他工业型号
2623 Si2623 AP2623 GM2623 CMN2623
元件标识（打印）
S SOT-23 内部结构
G SOT-23 管脚排列
DEVICE MARKING: 2623
- MAXIMUM RATINGS 最大額定值 Characteristic 特性参数
Symbol 符号
Max 最大值
Unit 单位
Drain-Source Voltage 漏极-源极电压 Gate- Source Voltage 栅极-源极电压 Drain Current (continuous) 漏极电流-连续 Drain Current (pulsed) 漏极电流-脉冲 Total Device Dissipation 总耗散功率
TA=25℃ (环境温度为25℃) Junction 结温
Storage Temperature 储存温度
BVDSS VGS ID IDM
Tj Tstg
-20 V
±10
-6 A
-15
1400 m W
150 ℃
-55 to +150 http://.szhhe. HAOHAI ELECTRONICS CO., LTD.
第1页 共4页 致力於中國功率器件優秀供應商 kkg@kkg..cn HPM2623_SOT-23
-6A, -20V 贴片P沟道场效应管...
