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AO3415 - P-Channel Enhancement-Mode MOSFET

Key Features

  •  .
  • -20V, -4.0A, RDS(ON)=35mΩ @ VGS=-4.5V  .
  • High dense cell design for extremely low RDS(ON)  .
  • Rugged and reliable  .
  • Lead free product is acquired  .
  • SOT-23 Package  .
  • Marking Code: A15E   Case Material: Molded Plastic.   UL Flammability Classification Rating 94V-0 HPM3415 P-Channel MOSFETs HPM3415 P-Channel Enhancement Mode MOS FETs SI3415 AO3415 ME3415 GM3415 Internal Block Diagram D HPM3415 (Package: SOT-23) D () G S S SOT-23 G SOT-23 DEVICE.

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Datasheet Details

Part number AO3415
Manufacturer HAOHAI
File Size 269.30 KB
Description P-Channel Enhancement-Mode MOSFET
Datasheet download datasheet AO3415 Datasheet

Full PDF Text Transcription for AO3415 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AO3415. For precise diagrams, and layout, please refer to the original PDF.

-4.0A,-30VP P P-Channel Enhancement-Mode MOS FETs Features ■-20V, -4.0A, RDS(ON)=35mΩ @ VGS=-4.5V ■High dense cell design for extremely low RDS(ON) ■Rugged and reliable ■...

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igh dense cell design for extremely low RDS(ON) ■Rugged and reliable ■Lead free product is acquired ■SOT-23 Package ■Marking Code: A15E Case Material: Molded Plastic.