HM8810E - Dual N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M semi

Part number	HM8810E
Manufacturer	H&M semi
File Size	673.17 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	HM8810E Datasheet
Additional preview pages of the HM8810E datasheet.

The HM8810E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package Schematic diagram 8810 Marking and pin Assignment Marking and pin Assignment.

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Published: Apr 12, 2021 |