HM35P03K - P-Channel MOSFET

Datasheet Summary

Description

The HM35P03K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Features

VDS = -30V,ID = -35A RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 16mΩ @ VGS=-10V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

H&M semi

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Datasheet Details

Part number	HM35P03K
Manufacturer	H&M semi
File Size	1.04 MB
Description	P-Channel MOSFET
Datasheet	HM35P03K Datasheet
Additional preview pages of the HM35P03K datasheet.

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Full PDF Text Transcription

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P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM35P03K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES ● VDS = -30V,ID = -35A RDS(ON) < 25mΩ @ VGS=-4.

Published: Apr 18, 2024 |