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HMS8N65 - N-Channel Super Junction Power MOSFET

Download the HMS8N65 datasheet PDF. This datasheet also covers the HMS8N65D variant, as both devices belong to the same n-channel super junction power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

gate charge.

conversion, and industrial power applications.

Features

  • New technology for high voltage device.
  • Low on-resistance and low conduction losses.
  • Small package.
  • Ultra Low Gate Charge cause lower driving requirements.
  • 100% Avalanche Tested.
  • ROHS compliant VDS 650 V RDS(ON) MAX 540 mΩ ID 8 A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMS8N65D-HMSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by H&M Semiconductor

Part Number Description
HMS8N65D N-Channel Super Junction Power MOSFET
HMS8N65F N-Channel Super Junction Power MOSFET
HMS8N65I N-Channel Super Junction Power MOSFET
HMS8N65K N-Channel Super Junction Power MOSFET
HMS8N70F 700V N-Channel Super Junction MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HMS8N65D, HMS8N65, HMS8N65F N-Channel Super Junction Power MOSFET Ⅱ General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
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