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HMS85N08K - N-Channel Super Trench II Power MOSFET

Description

switching performance.

RDS(ON) and Qg.

Features

  • VDS =80V,ID =85A RDS(ON)=6.8mΩ , typical (TO-252)@ VGS=10V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-/ Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package HMS85N08K HMS85N08K TO-252 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter.

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HMS85N08K N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/DC Converter ●Ideal for high-frequency switching and synchronous rectification General Features ● VDS =80V,ID =85A RDS(ON)=6.
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