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HMS6N10PR - N-Channel Super Trench Power MOSFET

Description

The HMS6N10PR uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =100V,ID =6A RDS(on)＜115mΩ（at VGS=10V RDS(on)＜130mΩ（at VGS=4.5V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested.

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N-Channel Super Trench Power MOSFET Description The HMS6N10PR uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =100V,ID =6A RDS(on)＜115mΩ（at VGS=10V RDS(on)＜130mΩ（at VGS=4.
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