Datasheet4U Logo Datasheet4U.com

HMS4354 - N-Channel Super Trench Power MOSFET

Description

The HMS4354 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =30V,ID =30A RDS(ON)=1.8mΩ (typical) @ VGS=10V RDS(ON)=2.5mΩ (typical) @ VGS=4.5V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested Schematic diagram HMS4354 Marking and pin assignment.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HMS4030 N-channel 100V MOSFET VBsemi
HMS4294 N-Channel 100V Power MOSFET VBsemi
HMS-23KMK381P3V DC 3V 6-wire Stepper Motor ETC
HMS0864B HMS0864B Series Delta
HMS0864B-100 HMS0864B Series Delta

Other Datasheets by H&M Semiconductor

Part Number Description
HMS4030 N-Channel Super Trench Power MOSFET
HMS40N10A N-Channel Super Trench Power MOSFET
HMS40N10D N-Channel Super Trench Power MOSFET
HMS40N10KA N-Channel Super Trench Power MOSFET
HMS40N65T 650V N-Channel Super Junction MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HMS4354 N-Channel Super Trench Power MOSFET Description The HMS4354 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =30V,ID =30A RDS(ON)=1.8mΩ (typical) @ VGS=10V RDS(ON)=2.5mΩ (typical) @ VGS=4.
Published: |