Datasheet4U Logo Datasheet4U.com

HMS3N70 - 700V N-Channel Super Junction MOSFET

Features

  • Very Low FOM (RDS(on) X Qg).
  • Extremely low switching loss.
  • Excellent stability and uniformity.
  • 100% Avalanche Tested.
  • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 3.0 1.5 9.3 Unit V A Ω nC.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HMS30C7202 Highly-integrated MPU ABOV
HMS30C7202 32-bit ARM7TDMI RISC static CMOS CPU core Hynix Semiconductor
HMS30C7202 32-Bit Microprocessor Hynix Semiconductor
HMS30C7202 32-Bit MPU MagnaChip Semiconductor
HMS30C7202N 32-Bit MPU MagnaChip Semiconductor

Other Datasheets by H&M Semiconductor

Part Number Description
HMS3N70F 700V N-Channel Super Junction MOSFET
HMS3N70R2 700V N-Channel Super Junction MOSFET
HMS310N85LL N-Channel Super Trench Power MOSFET
HMS320N04 N-Channel Super Trench II Power MOSFET
HMS320N04D N-Channel Super Trench II Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HMS3N70 HMS3N70 700V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent stability and uniformity • 100% Avalanche Tested • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 3.0 1.5 9.
Published: |