Datasheet4U Logo Datasheet4U.com

HMS35N10K - N-Channel Super Trench Power MOSFET

Description

The HMS35N10K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =100V,ID =35A RDS(ON) =23mΩ(max @ VGS=10V RDS(ON) =33mΩ(max) @ VGS=4.5V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HMS30C7202 Highly-integrated MPU ABOV
HMS30C7202 32-bit ARM7TDMI RISC static CMOS CPU core Hynix Semiconductor
HMS30C7202 32-Bit Microprocessor Hynix Semiconductor
HMS30C7202 32-Bit MPU MagnaChip Semiconductor
HMS30C7202N 32-Bit MPU MagnaChip Semiconductor

Other Datasheets by H&M Semiconductor

Part Number Description
HMS35N06D N-Channel Super Trench Power MOSFET
HMS35N20A N-Channel Super Trench Power MOSFET
HMS310N85LL N-Channel Super Trench Power MOSFET
HMS320N04 N-Channel Super Trench II Power MOSFET
HMS320N04D N-Channel Super Trench II Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HMS35N10K N-Channel Super Trench Power MOSFET Description The HMS35N10K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =100V,ID =35A RDS(ON) =23mΩ(max @ VGS=10V RDS(ON) =33mΩ(max) @ VGS=4.
Published: |