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HMS29N65D - N-Channel Super Junction Power MOSFET

Download the HMS29N65D datasheet PDF. This datasheet also covers the HMS29N65 variant, as both devices belong to the same n-channel super junction power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge.

This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

Features

  • Optimized body diode reverse recovery performance.
  • Low on-resistance and low conduction losses.
  • Small package.
  • Ultra Low Gate Charge cause lower driving requirements.
  • 100% Avalanche Tested.
  • ROHS compliant VDS RDS(ON)TYP ID 650 V 96 mΩ 2 A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMS29N65-HMSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by H&M Semiconductor

Part Number Description
HMS29N65 N-Channel Super Junction Power MOSFET
HMS29N65F N-Channel Super Junction Power MOSFET
HMS200N03D N-Channel Super Trench Power MOSFET
HMS200N15 N-Channel Super Trench II Power MOSFET
HMS200N15D N-Channel Super Trench II Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HMS29N65/HMS29N65D/HMS29N65F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
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