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HMS21N60 - N-Channel Super Junction Power MOSFET

Description

gate charge.

conversion, and industrial power applications.

Features

  • New technology for high voltage device.
  • Low on-resistance and low conduction losses.
  • Small package.
  • Ultra Low Gate Charge cause lower driving requirements.
  • 100% Avalanche Tested.
  • ROHS compliant T VDS@ jmax 650 V RDS(ON) MAX 180 mΩ ID 21 A.

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Full PDF Text Transcription

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HMS21N60,HMS21N60F N-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
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