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HMS20N25K - N-Channel Super Trench II Power MOSFET

Download the HMS20N25K datasheet PDF. This datasheet also covers the HMS20N25 variant, as both devices belong to the same n-channel super trench ii power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

switching performance.

RDS(ON) and Qg.

Features

  • VDS =250V,ID =80A RDS(ON)=89mΩ , typical (TO-220)@ VGS=10V RDS(ON)=89mΩ , typical (TO-252)@ VGS=10V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220 TO Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package HMS20N25 HMS20N25 TO-220 HMS20N25K HMS20N25K TO-252 Reel Size - Tape width - Quanti.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMS20N25-HMSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by H&M Semiconductor

Part Number Description
HMS20N25 N-Channel Super Trench II Power MOSFET
HMS20N25D N-Channel Super Trench II Power MOSFET
HMS20N15KA N-Channel Super Trench Power MOSFET
HMS20N65D 650V 20A SJMOS N-MOSFET
HMS20N65D8 650V Super-Junction MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HMS20N25, HMS20N25K N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
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