HMS15N50T
Description
This Power MOSFET is produc Feeadtuurseisng H&M Semi’s
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V to minimize conduction loss, pr-o Hvigihdreugsguedpneesrsior switching performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the avalanche and mutation m-o Imdpero.ved dv/dt capability
These devices are well suited for AC/DC power conversion
HMS15N50F,HMS15N50 HMS15N50T,HMS15N50A 500V N-Channel MOSFET
Features
-15A, 500V, RDS(on) typ.= 0.28Ω@VGS = 10 V
- Low gate charge ( typical 70n C)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
HMS15N50F
HMS15N50
HMS15N50A
TO-220F GDS
TO-220 GDS
TO-247 GDS
TO-3P
Absolute Maximum Ratings
TC = 25°C unless otherwise noted
Symbol
Parameter
TO-220/247/3P
TO-220F
VDSS Drain-Source Voltage
Drain Current
- Continuous (TC =...
