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HMS135N10G - N-Channel Super Trench II Power MOSFET

Download the HMS135N10G datasheet PDF. This datasheet also covers the HMS135N10K variant, as both devices belong to the same n-channel super trench ii power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

switching performance.

RDS(ON) and Qg.

Key Features

  • VDS =100V,ID =135A RDS(ON)=3.4mΩ , typical @ VGS=10V ID=1A RDS(ON)=3.9mΩ , typical @ VGS=10V ID=20A.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-252 DFN5X6-8L D DDD D DDD top view S SSG Top View G SSS Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package HMS135N10K HMS135N10K TO-25.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMS135N10K-HMSemiconductor.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by H&M Semiconductor

Part Number Description
HMS135N10 N-Channel Super Trench II Power MOSFET
HMS135N10D N-Channel Super Trench II Power MOSFET
HMS135N10K N-Channel Super Trench II Power MOSFET
HMS135N03D N-Channel Super Trench Power MOSFET
HMS135N04D N-Channel Super Trench Power MOSFET
HMS135N85 N-Channel Super Trench II Power MOSFET
HMS135N85D N-Channel Super Trench II Power MOSFET
HMS135N85G N-Channel Super Trench II Power MOSFET
HMS135N85K N-Channel Super Trench II Power MOSFET
HMS130N20 N-Channel Super Trench II Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HMS135N10K, HMS135N10G N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/DC Converter ●Ideal for high-frequency switching and synchronous rectification General Features ● VDS =100V,ID =135A RDS(ON)=3.4mΩ , typical @ VGS=10V ID=1A RDS(ON)=3.