HMM65N120T
Features
- 3rd generation Si C MOSFET technology
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
- -
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, Ro HS pliant
Benefits
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Reduce cooling requirements
- Increase power density
- Increase system switching frequency
Applications
- Solar inverters
- EV motor drive
- High voltage DC/DC converters
- Switched mode power supplies
VDS 1200V
ID @ 25˚C
63 A
RDS(on)
32 mΩ
TO-247-3
Package
Part Number HMM65N120T
Package TO 247-3
Marking HMM65N120T XXXX
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
VDSmax VGSmax VGSop
Drain
- Source Voltage Gate
- Source Voltage (dynamic) Gate
- Source Voltage (static)
Continuous Drain Current
1200 -8/+19...
