HMM65N120T - Silicon Carbide Power MOSFET

Product Overview

H&M Semiconductor

Part number	HMM65N120T
Manufacturer	H&M Semiconductor
File Size	874.52 KB
Description	Silicon Carbide Power MOSFET
Datasheet	HMM65N120T Datasheet
Additional preview pages of the HMM65N120T datasheet.

3rd generation SiC MOSFET technology.
High blocking voltage with low on-resistance.
High-speed switching with low capacitances.
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits.
Reduce switching losses and minimize gate ringing.
Higher system efficiency.
Reduce cooling requirements.
Increase power density.
Increase system switching frequency.

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Published: Jun 30, 2025 |