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HMG50N65FT - 650V 50A IGBT

Features

  • Low Switching Power Loss.
  • Low Switching Surge and Noise.
  • Advanced Field Stop Technology.
  • Low EMI.
  • Maximum Junction Temperature 175°C.
  • Qualified According to JEDEC For Target.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HMG50N65FT Part No.：HMG50N65FT Package：TO-247-3L Features:  Low Switching Power Loss  Low Switching Surge and Noise  Advanced Field Stop Technology  Low EMI  Maximum Junction Temperature 175°C  Qualified According to JEDEC For Target Applications  Pb-free Lead Plating, Halogen-free Mold Compound, RoHS Compliant Applications:  Industrial UPS  Welding Machine  Solar Converters  Energy Storage  EV Charger Key Performance and Package Parameters Type Vce Ic VCEsat,Tvj=25℃ Tvjmax Marking HMG50N65FT 650V 50A 1.
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