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HM70P03K - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM70P03K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Features

  • VDS = -30V,ID = -70A RDS(ON) < 12.5mΩ @ VGS=-4.5V RDS(ON) < 8mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet preview – HM70P03K

Datasheet Details

Part number HM70P03K
Manufacturer H&M Semiconductor
File Size 1.11 MB
Description P-Channel Enhancement Mode Power MOSFET
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Full PDF Text Transcription

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P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM70P03K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES ● VDS = -30V,ID = -70A RDS(ON) < 12.5mΩ @ VGS=-4.
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