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Small Signal MOSFET
mAmps, 60 Volts
N–Channel SOT23-6
• We declare that the material of product
compliance with RoHS requirements.
• ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Drain Current – Continuous TC = 25°C (Note 1.) – Continuous TC = 100°C (Note 1.) – Pulsed (Note 2.)
Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board (Note 3.) TA = 25°C Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate,(Note 4.
HM7002KDM Datasheet
