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HM6804 - Dual N-Channel MOSFET

Datasheet Summary

Description

The HM680 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 20V,ID = A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package S S   Schematic diagram G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 Marking and pin Assignment.

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Datasheet preview – HM6804

Datasheet Details

Part number HM6804
Manufacturer H&M Semiconductor
File Size 612.48 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet HM6804 Datasheet
Additional preview pages of the HM6804 datasheet.

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Full PDF Text Transcription

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HM680 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM680 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. D G D G GENERAL FEATURES ● VDS = 20V,ID = A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.
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