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HM6803 - Dual P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM6803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V DD GG SS   Schematic diagram G1 1 S2 2 6 5 D1 S1.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package G2 3 4 D2 Marking and pin Assignment.

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Datasheet preview – HM6803

Datasheet Details

Part number HM6803
Manufacturer H&M Semiconductor
File Size 694.97 KB
Description Dual P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM6803 Datasheet
Additional preview pages of the HM6803 datasheet.

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Full PDF Text Transcription

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HM6803 Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM6803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.
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