• Part: HM6800
  • Description: Dual N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 422.58 KB
Download HM6800 Datasheet PDF
H&M Semiconductor
HM6800
DESCRIPTION The HM6800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES - VDS = 30V,ID = A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) <58mΩ @ VGS=10V - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Schematic diagram G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 Marking and pin Assignment Application - PWM applications - Load switch - Power management SOT23-6L top view Package Marking And Ordering Information Device Marking Device Device Package 6800M SOT-23-6L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source...