HM65P03D
Description
The HM65P03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =-30V,ID =-65A RDS(ON) = 2.8mΩ (Typ) @ VGS=-10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Application
- Battery and loading switching
S Schematic diagram
Marking and pin assignment
100% UIS TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
DFN 5x6 EP
Reel Size
- Tape width
- Quantity
- Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse...
