HM5N50K
Description
The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
Product Summary
VDSS
500V
5A
RDS(on),typ
2.0Ω
Qg,typ
9.5n C
+01.
Features
Pin Configuration
- Low RDS(on)
- Low gate charge (typ. Qg =9.5n C)
- 100% UIS tested
- Ro HS pliant
Applications
- Power factor correction.
- Switched mode power supplies.
- LED driver.
TO-252D
S N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage Continuous drain current 1)
Pulsed drain current 2)
( TC = 25°C ) ( TC = 100°C )
VDSS ID
Gate-Source voltage
VGSS
Avalanche energy, single pulse 3)
Power Dissipation Operating and Storage Temperature Range
PD TJ,...
