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HM5N50K - Lonten N-channel 500V 5A Power MOSFET

Description

The Power MOSFET is fabricated using the advanced planar VDMOS technology.

The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

+01.

Features

  • Pin Configuration.
  • Low RDS(on).
  • Low gate charge (typ. Qg =9.5nC).
  • 100% UIS tested.
  • RoHS compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Lonten N-channel 500V, 5A Power MOSFET Description The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy. Product Summary VDSS 500V ID 5A RDS(on),typ 2.0Ω Qg,typ 9.5nC +01. Features Pin Configuration ⚫ Low RDS(on) ⚫ Low gate charge (typ. Qg =9.5nC) ⚫ 100% UIS tested ⚫ RoHS compliant Applications ⚫ Power factor correction. ⚫ Switched mode power supplies. ⚫ LED driver.
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