HM5N15Q
Description
The HM5N15Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS = 150V,ID =5A
RDS(ON) <300mΩ @ VGS=10V
(Typ:70mΩ)
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Application
- Boost converters
- LED backlighting
- Uninterruptible power supply
Schematic diagram Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
DFN3X3-8L
Reel Size
- Tape width
- Quantity
- Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
ID (100℃)
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
Maximum...
