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HM5N06R - N-Channel Enhancement Mode Power MOSFET

Description

The HM5N06R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =60V,ID =5A RDS(ON) < 45mΩ @ VGS=10V （Typ：38mΩ） S Schematic diagram.

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Datasheet Details

Part number HM5N06R
Manufacturer H&M Semiconductor
File Size 282.66 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM5N06R Datasheet

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Full PDF Text Transcription

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RM NCE N-Channel Enhancement Mode Power MOSFET Description The HM5N06R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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