• Part: HM5N06APR
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 461.95 KB
Download HM5N06APR Datasheet PDF
H&M Semiconductor
HM5N06APR
Description The HM5N06$35 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =60V,ID =5A RDS(ON) <35mΩ @ VGS=10V (Typ.26mΩ) RDS(ON) <45mΩ @ VGS=4.5V (Typ.32mΩ) Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply HM5N06'68 Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package HM5N06$35HM5N06$35 SOT-89-3L Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit 60...