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HM50P06K - P-Channel Enhancement Mode Power MOSFET

General Description

The +03.

uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

Key Features

  • VDS =-60V,ID =-50A RDS(ON).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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+03. P-Channel Enhancement Mode Power MOSFET Description The +03. uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-50A RDS(ON) <28mΩ @ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Load switch Schematic diagram +03. 100% UIS TESTED! Marking and pin assignment 100% ΔVds TESTED! TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package +03. +03.