• Part: HM50P06K
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 450.05 KB
Download HM50P06K Datasheet PDF
H&M Semiconductor
HM50P06K
Description The +03. uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features - VDS =-60V,ID =-50A RDS(ON) <28mΩ @ VGS=-10V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation Application - Load switch Schematic diagram +03. 100% UIS TESTED! Marking and pin assignment 100% ΔVds TESTED! TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package +03. +03. TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power...