HM4N70F - N-channel Enhanced VDMOSFET

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM4N70F
Manufacturer	H&M Semiconductor
File Size	555.05 KB
Description	N-channel Enhanced VDMOSFET
Datasheet	HM4N70F Datasheet
Additional preview pages of the HM4N70F datasheet.

Product details

Description

HM4N70F the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard.

Features

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 15nC) l Low Reverse transfer capacitances(Typical: 9pF) l 100% Single Pulse avalanche energy Test.

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Published: Jul 15, 2025 |