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HM4N65 - 650V N-Channel MOSFET

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H&M Semiconductor

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HM4N65 650V N-Channel MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM4N65

Datasheet Details

Part number	HM4N65
Manufacturer	H&M Semiconductor
File Size	416.61 KB
Description	650V N-Channel MOSFET
Datasheet	HM4N65 Datasheet
Additional preview pages of the HM4N65 datasheet.

Product details

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

Features

4.0A, 650V, RDS(on) = 3.0 @VGS = 10 V.
Low gate charge ( typical 15nC).
High ruggedness.
Fast wsitching.
100% avalanche tested.
Improved dv/dt capability Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2).

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Published: Jul 1, 2025 |