Datasheet4U Logo Datasheet4U.com

HM4963 - Dual P-Channel Enhancement Mode Power MOSFET

Description

The HM4963 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @ VGS=-2.5V D1 G1 G2 D2 S1 S2 Schematic diagram HM4963.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Datasheet Details

Part number HM4963
Manufacturer H&M Semiconductor
File Size 633.20 KB
Description Dual P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM4963 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HM4-6514-B 1024 x 4 CMOS RAM Intersil Corporation
HM4-6516-9 2K x 8 CMOS RAM Intersil Corporation
HM4-65162-9 2K x 8 Asynchronous CMOS Static RAM Intersil Corporation
HM4-65162B-9 2K x 8 Asynchronous CMOS Static RAM Intersil Corporation
HM4-65162C-9 2K x 8 Asynchronous CMOS Static RAM Intersil Corporation

Other Datasheets by H&M Semiconductor

Part Number Description
HM491C PFM boost DC-DC converter
HM4922 20V Full-Bridge of MOSFET
HM4923 30V Full-Bridge of MOSFET
HM4924 40V Full-Bridge of MOSFET
HM4924B 40V Full-Bridge of MOSFET

Full PDF Text Transcription

Click to expand full text
HM4963 Dual P-Channel Enhancement Mode Power MOSFET Description The HM4963 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @ VGS=-2.
Published: |