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HM4892A - Dual N-Channel MOSFET

Features

  • VDSS=100V／VGSS=±20V／ID=6.5A RDS(ON)=37mΩ(max. )@VGS=10V.
  • Reliable and Rugged.
  • Advanced trench process technology.
  • High Density Cell Design For Low On-Resistance   Schematic diagram.

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Full PDF Text Transcription

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HM4892A 100VDS／±20VGS／6.5A(ID) Dual N-Channel Enhancement Mode MOSFET Features  VDSS=100V／VGSS=±20V／ID=6.5A RDS(ON)=37mΩ(max.)@VGS=10V  Reliable and Rugged  Advanced trench process technology  High Density Cell Design For Low On-Resistance   Schematic diagram Applications  Power Management in Inverter System  Boost for LED Backlight Switching Time Test Circuit and Waveforms HM' Marking and pin Assignment SOP-8 top view Package Marking and Ordering Information Device Marking +0$ Device +0$ Device Package 623 Reel Size - Tape width -  Page 1 Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com Quantity - v1.0 HM4892A 100VDS／±20VGS／6.
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