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HM4830 - Dual N-Channel Enhancement Mode Power MOSFET

Description

The HM4830 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =30V,ID =18A RDS(ON) < 7.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.

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HM4830A Dual N-Channel Enhancement Mode Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM4830 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4830 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ●VDS =30V,ID =18A RDS(ON) < 7.
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