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HM4812 - Dual N-Channel Enhancement Mode Power MOSFET

General Description

The HM4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications.

Key Features

  • VDS = 30V,ID = 7A RDS(ON) < 31mΩ @ VGS=10V RDS(ON) < 43mΩ @ VGS=4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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Other Datasheets by H&M Semiconductor

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM4812 Dual N-Channel Enhancement Mode Power MOSFET Description The HM4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications. Genera Features ● VDS = 30V,ID = 7A RDS(ON) < 31mΩ @ VGS=10V RDS(ON) < 43mΩ @ VGS=4.